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2SD2139

Part No 2SD2139
Manufacturer Panasonic
Catalog Transistors (BJT) - Single
Description Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)
Sample
Rohs State rohs
ECAD Module
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Categories Uncategorized
Manufacturer Panasonic
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 815372-2SD2139
Ultra Librarian 3D Model Ultra Librarian 2SD2139 CAD Model

Description

The 2SD2139 is a silicon NPN epitaxial planar transistor manufactured by Panasonic. This transistor is designed for switching and amplifier applications. It boasts a high collector current and voltage rating, making it suitable for a variety of power control circuits.

Applications

  • Power supplies
  • Motor control circuits
  • Switching regulators
  • DC-DC converters
  • General-purpose switching and amplification

Features

  • High collector current: Capable of handling significant current flow.
  • High collector-emitter voltage: Offers a wide operating voltage range.
  • Low saturation voltage: Minimizes power loss during switching.
  • NPN polarity: Suitable for a wide range of circuit configurations.
  • Fast switching speed: Enables efficient operation in high-frequency applications.

Benefits

  • Improved power efficiency: The low saturation voltage reduces power loss and increases efficiency.
  • Increased power handling capability: The high collector current and voltage ratings allow for greater power control.
  • Enhanced reliability: The transistor's robust design ensures long-term reliability.
  • Simplified circuit design: The transistor's characteristics simplify the design of power control circuits.
  • Cost-effective solution: Offers a good balance of performance and cost.

Additional Details

The 2SD2139 features a collector-emitter voltage (VCEO) of 80V, a collector current (IC) of 7A, and a collector power dissipation (PC) of 40W. It has a current gain (hFE) typically ranging from 50 to 200. The transistor is typically supplied in a TO-220 package, facilitating easy mounting and heat sinking. Operating and storage junction temperature ranges from -55 to 150 degrees Celcius.

When using this transistor, it's crucial to adhere to the manufacturer's recommended operating conditions and provide adequate heat sinking to prevent overheating and ensure optimal performance and longevity. Proper base drive is also critical for achieving the desired switching characteristics. The datasheet should be consulted for complete electrical characteristics and application guidelines.

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