The 2N5876 is a high-power, NPN bipolar junction transistor (BJT) from Microchip Technology. Designed for linear amplifiers, switching applications, and power regulators, this robust transistor offers a blend of reliability and performance for a wide range of industrial and commercial applications.

Key Features

• Voltage & Current: The 2N5876 is capable of withstanding high voltage and current, with a collector-emitter voltage (Vceo) of 120V and a collector current (Ic) of up to 25A.
• Power Handling: This component can dissipate a significant amount of power, up to 200W, making it suitable for high-power applications.
• Frequency Performance: With a transition frequency (ft) of 4MHz, the 2N5876 can be used in applications requiring moderate speed.
• Thermal Performance: The transistor is designed with a metal case to ensure superior thermal performance and reliability.
• TO-3 Package: Enclosed in a TO-3 package, it provides a robust and durable housing that facilitates efficient heat dissipation and easy mounting on heat sinks.

Applications

The 2N5876 is versatile and can be used in a variety of applications, including:

• Audio power amplifiers
• DC power supplies
• Motor controllers
• High-power switching circuits
• Linear amplifiers

Quality and Support

As with all Microchip Technology products, the 2N5876 is manufactured to the highest quality standards. Customers can expect reliable performance and longevity from this component. Additionally, Microchip Technology provides comprehensive technical support and documentation, ensuring that designers and engineers can integrate the 2N5876 into their projects with confidence.

Whether you're designing high-fidelity audio equipment or robust power supply units, the 2N5876 offers the power and performance needed for demanding applications.