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Same model may have multiple batches, images only for reference.
XN1211-(TX) Real Image
Same model may have multiple batches, images only for reference.

XN1211-(TX)

Part No XN1211-(TX)
Manufacturer Panasonic
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W MINI5
Datasheet
XN1211-(TX) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 35 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package Mini5-G1
Win Source Part Number 053358-XN1211-(TX)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian XN1211-(TX) CAD Model

Description

The Panasonic Electronic Components XN1211-(TX) is a dual NPN pre-biased transistor with a frequency transition of 150MHz.

  • Frequency Transition: 150MHz
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Collector Cut-Off Current (max): 500nA
  • Typical Gain (hFE) (min): 35 @ 5mA, 10V
  • Maximum Power Dissipation: 300mW
  • Mounting: SMD (SMT) technology
  • Case/Package: mini5-G1
  • Resistors: R1 (10k) and R2 (10k) for the base and emitter base, respectively
  • Supply and Demand: balance

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