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HAT2173H-EL-E

Part No HAT2173H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 25A LFPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 6V @ 20mA
Max Gate Charge 61nC @ 10V
Max Input Capacitance 4350pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 12.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 204574-HAT2173H-EL-E
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name HAT2173H
Introduction Date May 06, 2003
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian HAT2173H-EL-E CAD Model

Description

The Renesas Electronics America HAT2173H-EL-E is a MOSFET with N-channel polarity and a maximum power dissipation of 30W (Tc). It is a discrete semiconductor product with a high popularity and a balanced supply and demand status. The product comes in LFPAK packaging and is surface mountable.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 25A (Ta)
  • Gate-Source Threshold Voltage: 6V @ 20mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.4545 $54.5450
23+ $4.4755 $102.9365
35+ $4.3357 $151.7495
48+ $4.1958 $201.3984
62+ $4.0560 $251.4720
83+ $3.6364 $301.8212
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,603 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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