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NP160N04TDG

Part No NP160N04TDG
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 160A TO-263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 15750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 220W (Tc)
Maximum Rds On at Id,Vgs 2 mOhm @ 80A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263-7
Dimension TO-263-7, D2Pak (6 Leads + Tab)
Win Source Part Number 258881-NP160N04TDG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP160N04TDG CAD Model

Description

The Renesas Electronics America NP160N04TDG is an obsolete (end of life) electronic component with a medium popularity and a balanced supply and demand status.

  • Type: MOSFET
  • Maximum Power Dissipation: 1.8W (Ta) and 220W (Tc)
  • Continuous Drain Current: 160A (Ta) @ 25°C
  • Manufacturer: Renesas Electronics America

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,050 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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