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Same model may have multiple batches, images only for reference.
NP20P04SLG-E1-A Real Image
Same model may have multiple batches, images only for reference.

NP20P04SLG-E1-A

Part No NP20P04SLG-E1-A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 20A TO-252
Datasheet
NP20P04SLG-E1-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1650pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 38W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 10A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252 (MP-3ZK)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 045318-NP20P04SLG-E1-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP20P04SLG-E1-A CAD Model

Description

The Renesas Electronics America MOSFET is a P-channel power MOSFET that is ideal for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.2W (Ta) and 38W (Tc)
  • Continuous Drain Current: 20A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 40V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds on: 25 mOhm @ 10A, 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63

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85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
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