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Same model may have multiple batches, images only for reference.
RJK1052DPB-00#J5 Real Image
Same model may have multiple batches, images only for reference.

RJK1052DPB-00#J5

Part No RJK1052DPB-00#J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 20A LFPAK
Datasheet
RJK1052DPB-00#J5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 29nC @ 4.5V
Max Input Capacitance 4160pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 55W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 123222-RJK1052DPB-00#J5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RJK1052DPB-00#J5 CAD Model

Description

The Renesas Electronics America RJK1052DPB-00#J5 MOSFET is a single discrete semiconductor product that belongs to the FETs family. It has a maximum power dissipation of 55W (Tc) and a drain-source breakdown voltage of 100V.

  • Mounting Technology: SMD (SMT)
  • Polarity: N-Channel
  • Package: Reel - TR
  • Popularity: Medium popularity in the market
  • Supply and Demand Status: Limited

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Quantity Unit Price Ext. Price
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17+ $6.9242 $117.7114
26+ $6.7082 $174.4132
36+ $6.4923 $233.7228
47+ $6.2751 $294.9297
62+ $5.6260 $348.8120
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Availability: 7,800 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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