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UPA1808GR-9JG-E1-A

Part No UPA1808GR-9JG-E1-A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description UPA1808 - N CHANNEL MOSFET / N-Channel 30 V 9.5A (Ta) 2W (Ta) Surface Mount 8-Power TSSOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 10 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package 8-Power TSSOP
Package / Case 8-PowerTSSOP (0.173", 4.40mm Width)
RoHS Status RoHS non-compliant
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 2156-UPA1808GR-9JG-E1-A
Standard Package 1
Win Source Part Number 1102417-UPA1808GR-9JG-E1-A
Ultra Librarian 3D Model Ultra Librarian UPA1808GR-9JG-E1-A CAD Model

Description

The 1102417-UPA1808GR-9JG-E1-A is a N-channel MOSFET transistor from Renesas.

  • Designed for: discrete semiconductor products
  • Mounting: SMD (SMT)
  • Package: 8-PowerTSSOP with a width of 0.173 inches and 4.40mm
  • Device feature: not specified by the vendor
  • Drain to source voltage: 30 V
  • Continuous drain current: 9.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
  • Gate charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Temperature range: 150°C
  • Product Status: obsolete and non-compliant with RoHS.

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