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Same model may have multiple batches, images only for reference.
QS5U12TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

QS5U12TR

Part No QS5U12TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2A TSMT5
Datasheet
QS5U12TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 1mA
Max Gate Charge 3.9nC @ 4.5V
Max Input Capacitance 175pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT5
Dimension SOT-23-5 Thin, TSOT-23-5
Win Source Part Number 106505-QS5U12TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS5U12TR CAD Model

Description

The QS5U12TR is a MOSFET manufactured by Rohm Semiconductor.

  • Type: N-Channel MOSFET
  • Feature: Schottky Diode (Isolated) FET
  • Designed for: discrete semiconductor products
  • Mounting: surface-mount device
  • Package: TSMT5
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2A @ 25°C
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1096 $55.4800
110+ $0.9105 $100.1550
175+ $0.8820 $154.3500
235+ $0.8536 $200.5960
305+ $0.8251 $251.6555
410+ $0.7398 $303.3180
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Availability: 3,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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