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Same model may have multiple batches, images only for reference.
R6047ENZ1C9 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

R6047ENZ1C9

Part No R6047ENZ1C9
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 47A TO247 / Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Bulk
Datasheet
R6047ENZ1C9 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 145nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3850pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 120W (Tc)
Rds On (Maximum) @ Id, Vgs 72 mOhm @ 25.8A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 793008-R6047ENZ1C9
Popularity Medium
Supply and Demand Status Limited
Family Name R6047ENZ1
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian R6047ENZ1C9 CAD Model

Description

The R6047ENZ1C9 from Rohm Semiconductor is a MOSFET electronic component.

  • Mounting: Through-hole
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drain Source Voltage: 600V
  • Gate Charge (Qg) (maximum) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 3850pF @ 25V
  • Power Dissipation (maximum): 120W (Tc)
  • Rds On (maximum) @ Id, Vgs: 72 mOhm @ 25.8A @ 10V
  • Manufacturer: Rohm Semiconductor
  • Win Source Part Number: 793008-R6047ENZ1C9

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91+ $3.8103 $346.7373
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