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Same model may have multiple batches, images only for reference.
R8008ANX Real Image
Same model may have multiple batches, images only for reference.

R8008ANX

Part No R8008ANX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 8A TO-220FM
Datasheet
R8008ANX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1080pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 1.03 Ohm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 042292-R8008ANX
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian R8008ANX CAD Model

Description

The R8008ANX is a MOSFET manufactured by Rohm Semiconductor.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 50W (Tc)
  • Status: Active
  • Temperature Range: 150°C (TJ)
  • Supply and Demand: Limited
  • Case/Package: TO-220FM
  • Continuous Drain Current: 8A (Ta)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 1.03 Ohm @ 4A, 10V

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