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Same model may have multiple batches, images only for reference.
RDR005N25TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RDR005N25TL

Part No RDR005N25TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 0.5A SC-96-3
Datasheet
RDR005N25TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 3.5nC @ 10V
Max Input Capacitance 70pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 540mW (Ta)
Maximum Rds On at Id,Vgs 8.8 Ohm @ 250mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT3
Dimension SC-96
Win Source Part Number 027268-RDR005N25TL
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RDR005N25TL CAD Model

Description

The RDR005N25TL is an N-channel MOSFET manufactured by Rohm Semiconductor.

  • Category: Discrete semiconductor product
  • Popularity: High
  • Supply and Demand Status: Sufficient
  • Power Dissipation: 540mW (Ta)
  • Drive Voltage: 4V, 10V
  • Status: Not for new designs
  • Operating Temperature Range: 150°C (TJ)
  • Case/Package: TSMT3
  • Dimension: SC-96
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current at 25°C: 500mA (Ta)
  • Gate-Source Threshold Voltage: 3V @ 1mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
435+ $0.1331 $57.8985
930+ $0.1245 $115.7850
1,445+ $0.1203 $173.8335
2,070+ $0.1117 $231.2190
2,690+ $0.1074 $288.9060
3,365+ $0.1030 $346.5950
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Availability: 30,000 pieces
MOQ: 435 pcs
Order Increment : 1 pcs
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