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RS3E075ATTB

Part No RS3E075ATTB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7.5A 8SOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1250pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 23.5 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1092736-RS3E075ATTB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RS3E075ATTB CAD Model

Description

The Rohm Semiconductor RS3E075ATTB is a P-channel MOSFET.

  • Maximum Power Dissipation: 2W (Ta)
  • Packaging: Reel-TR
  • Mounting Type: Surface-Mounted
  • Drain-Source Breakdown Voltage: 30V
  • Rds On (Max) @ Id,Vgs: 23.5 mOhm @ 7.5A, 10V
  • Application: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
975+ $0.0594 $57.9150
2,370+ $0.0487 $115.4190
3,670+ $0.0473 $173.5910
5,055+ $0.0457 $231.0135
6,530+ $0.0443 $289.2790
8,750+ $0.0397 $347.3750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 975 pcs
Order Increment : 1 pcs
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