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Same model may have multiple batches, images only for reference.
RSD200N10TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RSD200N10TL

Part No RSD200N10TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 20A CPT3
Datasheet
RSD200N10TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 48.5nC @ 10V
Max Input Capacitance 2200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 118339-RSD200N10TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSD200N10TL CAD Model

Description

The Rohm Semiconductor RSD200N10TL is a MOSFET technology device with a drain-source breakdown voltage of 100V and a continuous drain current of 20A @ 25°C.

  • Maximum Rds On: 52 mOhm @ 10A and 10V
  • Maximum gate-source voltage: ±20V
  • Gate-source threshold voltage: 2.5V @ 1mA
  • Maximum gate charge: 48.5nC @ 10V
  • Maximum input capacitance: 2200pF @ 25V
  • Package: CPT3 package with TO-252-3, DPak (2 Leads + Tab), SC-63 dimensions
  • Mounting: SMD technology
  • Status: obsolete (EOL)
  • Popularity rating: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8181 $53.1765
150+ $0.6713 $100.6950
235+ $0.6503 $152.8205
320+ $0.6294 $201.4080
415+ $0.6084 $252.4860
555+ $0.5454 $302.6970
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