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RSR020N06TL

Part No RSR020N06TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2A TSMT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 4.9nC @ 10V
Max Input Capacitance 180pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 540mW (Ta)
Maximum Rds On at Id,Vgs 170 mOhm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT3
Dimension SC-96
Win Source Part Number 027526-RSR020N06TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSR020N06TL CAD Model

Description

The RSR020N06TL is an N-channel MOSFET from Rohm Semiconductor, designed for use in discrete semiconductor products.

  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 170 mOhm @ 2A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Input Capacitance: 180pF @ 10V
  • Maximum Gate Charge: 4.9nC @ 10V
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Description: The RSR020N06TL is an excellent choice for applications in which an N-channel MOSFET with a balanced supply and demand status is required.

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2011 $50.2750
610+ $0.1650 $100.6500
940+ $0.1599 $150.3060
1,295+ $0.1547 $200.3365
1,675+ $0.1496 $250.5800
2,240+ $0.1341 $300.3840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,000 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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