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Same model may have multiple batches, images only for reference.
RSS050P03TB Real Image
Same model may have multiple batches, images only for reference.

RSS050P03TB

Part No RSS050P03TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 5A 8-SOIC
Datasheet
RSS050P03TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 42 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 104374-RSS050P03TB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RSS050P03TB CAD Model

Description

The Rohm Semiconductor MOSFET is a P-channel transistor.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5A @ 25°C
  • Maximum Rds On: 42 mOhm @ 5A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Input Capacitance: 1200pF @ 10V
  • Drive Voltage: 4V (Max Rds On) and 10V (Min Rds On)
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 2W (Ta)
  • Operating Temperature Range: 150°C (TJ)
  • Supply and Demand Status: sufficient

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800+ $0.1444 $115.5200
1,240+ $0.1398 $173.3520
1,710+ $0.1351 $231.0210
2,215+ $0.1305 $289.0575
2,975+ $0.1167 $347.1825
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