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Same model may have multiple batches, images only for reference.
RTQ020N03TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RTQ020N03TR

Part No RTQ020N03TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2A TSMT6
Datasheet
RTQ020N03TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 1mA
Max Gate Charge 3.3nC @ 4.5V
Max Input Capacitance 135pF @ 10V
Maximum Gate-Source Voltage 12V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 125 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 027636-RTQ020N03TR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian RTQ020N03TR CAD Model

Description

The RTQ020N03TR is an N-channel MOSFET produced by Rohm Semiconductor.

  • Category: It is designed to be used as a discrete semiconductor product.
  • Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2A @ 25°C
  • Maximum Gate-Source Voltage: 12V
  • Package: TSMT6 (SC-95) package
  • Operating Temperature: 150°C
  • Supply and Demand: limited
  • Package Quantity: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2302 $58.7010
615+ $0.1890 $116.2350
950+ $0.1831 $173.9450
1,305+ $0.1772 $231.2460
1,690+ $0.1712 $289.3280
2,260+ $0.1535 $346.9100
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Availability: 3,400 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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