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SCT3017ALHRC11

Part No SCT3017ALHRC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 118A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 22.1mOhm @ 47A, 18V
Vgs(th) (Max) @ Id 5.6V @ 23.5mA
Gate Charge (Qg) (Max) @ Vgs 172 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2884 pF @ 500 V
Power Dissipation (Max) 427W
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT3017
Standard Package 450
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278185-SCT3017ALHRC11
Ultra Librarian 3D Model Ultra Librarian SCT3017ALHRC11 CAD Model

Description

The Rohm Semiconductor SCT3017ALHRC11 is an N-channel SiCFET (Silicon Carbide) transistor that is part of the Automotive AEC-Q101 series.

  • Drain to Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 118A @ 25°C
  • Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
  • Power Dissipation (Max): 427W
  • Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
  • Gate-Source Voltage (Vgs) range: +22V, -4V
  • Temperature Range: 175°C (TJ)
  • Package Type: Through-hole TO-247-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $182.4748 $182.4748
2+ $163.5981 $327.1962
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