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Same model may have multiple batches, images only for reference.
SP8K31HZGTB Real Image
Same model may have multiple batches, images only for reference.

SP8K31HZGTB

Part No SP8K31HZGTB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 60V DUAL NCH+NCH POWER MOSFET. S / Mosfet Array 2 N-Channel (Dual) 60V 3.5A (Ta) 2W (Ta) Surface Mount 8-SOP
Datasheet
SP8K31HZGTB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Rohm Semiconductor
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Rds On (Max) @ Id, Vgs 120mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V
Power - Max 2W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-SP8K31HZGTBDKR,846-SP8K31HZGTBTR,846-SP8K31HZGTBCT
Standard Package 2,500
Win Source Part Number 1095533-SP8K31HZGTB
Ultra Librarian 3D Model Ultra Librarian SP8K31HZGTB CAD Model

Description

The SP8K31HZGTB is a dual N-channel MOSFET array that comes in an 8-SOIC package.

  • Vdss: 60V
  • Id: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Quality: High-quality MOSFET array that provides excellent performance and reliability
  • Ideal for: Discrete semiconductor products such as transistors - FETs, MOSFETs - arrays
  • Standard Package: 2,500
  • Packaging: Tape and reel packaging

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