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UMH25NTN

Part No UMH25NTN
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description NPN+NPN, SOT-363, DUAL DIGITAL T  /  Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel (TR)
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package UMT6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names 846-UMH25NTNTR
Standard Package 3,000
Win Source Part Number 978770-UMH25NTN
Ultra Librarian 3D Model Ultra Librarian UMH25NTN CAD Model

Description

The UMH25NTN is a dual NPN Pre-Biased transistor from Rohm Semiconductor.

  • Maximum Power: 150mW
  • Maximum Voltage Collector-Emitter Breakdown: 50V
  • Maximum Collector Current: 100mA
  • Frequency Transition: 250MHz
  • Case/Package: 6-TSSOP, SC-88, SOT-363
  • Packaging: Tape & reel (TR)
  • Supply and Demand Status: Limited
  • Resistor-Base (R1): 4.7kOhms
  • Resistor-Emitter Base (R2): 47kOhms

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