The 2SB1136 is a PNP silicon epitaxial transistor manufactured by SANYO Semiconductor (U.S.A) Corporation. It is designed for use in low-frequency power amplifier applications and switching circuits. This transistor features a high collector current capability and low saturation voltage, making it suitable for driving inductive loads and providing efficient power amplification.

Applications:

• Audio amplifiers
• DC-DC converters
• Relay drivers
• Motor control circuits
• Switching regulators

Features:

• High collector current capability (IC = -3A)
• Low saturation voltage (VCE(sat) = -0.5V max)
• High power dissipation (PC = 1.5W)
• Excellent linearity
• Complementary to 2SD1676 (NPN transistor)

Benefits:

• Efficient power amplification
• Effective switching performance
• Reduced power loss
• Improved circuit stability
• Simplified circuit design

Additional Details:

The 2SB1136 is typically packaged in a TO-126 package. The collector-emitter breakdown voltage (VCEO) is -50V. The current gain (hFE) ranges from 80 to 240. The operating temperature range is -55°C to +150°C. When using this transistor, ensure adequate heat sinking is provided to prevent overheating, especially at higher current levels. It is commonly used in audio output stages and in circuits requiring a moderate power PNP transistor. The complementary NPN transistor, 2SD1676, can be used in push-pull amplifier configurations for increased power output and efficiency.