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Same model may have multiple batches, images only for reference.
2SD1913S Real Image
Same model may have multiple batches, images only for reference.

2SD1913S

Part No 2SD1913S
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 3A TO-220ML
Datasheet
2SD1913S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Packaging Bulk
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 1V @ 200mA, 2A
Typical Gain (hFE) (Min) 140 @ 500mA, 5V
Maximum Power Dissipation 2W
Frequency - Transition 100MHz
Mounting Through Hole
Case / Package TO-220ML
Win Source Part Number 1004578-2SD1913S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD1913S CAD Model

Description

The SANYO Semiconductor (U.S.A) Corporation's 2SD1913S transistor is a through-hole NPN transistor that is designed for use in discrete semiconductor products.

  • Maximum Collector-Emitter Breakdown Voltage: 60V
  • Maximum Current Collector: 3A
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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