STB155N3H6 - N-channel 30 V, 3.3 mΩ typ., 120 A STripFET H6 Power MOSFET in D2PAK package

The STB155N3H6 is a highly efficient N-channel Power MOSFET from STMicroelectronics, designed to meet the rigorous standards of modern electronic applications. This MOSFET is a part of the STripFET H6 series, which is renowned for its low on-resistance and minimal gate charge, making it an excellent choice for high-efficiency power management tasks.

With a 30 V breakdown voltage, the STB155N3H6 is well-suited for a range of applications, including but not limited to, DC-DC converters, motor drives, and other power switching applications. The device boasts an extremely low on-resistance of just 3.3 mΩ (typical), which contributes to its high current carrying capability of 120 A. This feature ensures minimal power loss and improved overall efficiency, which is critical for energy-sensitive designs.

The STB155N3H6 comes in a robust D2PAK package, which is known for its ability to handle high thermal and electrical loads. The package is designed to offer improved thermal performance and reduced package resistance, further enhancing the MOSFET's efficiency and reliability. This makes the STB155N3H6 an ideal choice for power applications where space is at a premium and thermal management is a concern.

Additional features of this Power MOSFET include a 100% avalanche tested design, which ensures reliability under extreme conditions. It also has a very low intrinsic capacitance, which results in faster switching speeds, further improving performance in high-frequency applications.

STMicroelectronics has a reputation for producing high-quality components that are both reliable and cost-effective. The STB155N3H6 is no exception, offering designers a powerful tool to enhance the efficiency and performance of their power management systems. Whether it's for industrial, automotive, or consumer electronics, the STB155N3H6 is a versatile component that can meet the demands of a wide array of power applications.