EN
  • EN
  • DE

STB300NH02L

Part No STB300NH02L
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series STripFET™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 24 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 109.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7055 pF @ 15 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB300N
Other Names STB300NH02L,497-7945-6,497-7945-1,497-7945-2,-497-7945-1,-497-7945-2,-497-7945-6
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277990-STB300NH02L
Ultra Librarian 3D Model Ultra Librarian STB300NH02L CAD Model

Description

STB300NH02L - N-Channel MOSFET by STMicroelectronics

The STB300NH02L is a robust and efficient N-Channel MOSFET manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance products. This MOSFET is part of STMicroelectronics' STripFET™ II Power MOSFET series, which is renowned for its low on-resistance and low gate charge, making it an excellent choice for a wide range of power management applications.

With a 24V typical gate charge and a maximum drain-source voltage (V<sub>DS) of 25V, the STB300NH02L is designed to deliver high-speed switching performance with minimal losses. The device can handle a continuous drain current (I<sub>D) of up to 120A at 25°C, making it suitable for high-current applications. Its low threshold voltage (V<sub>GS(th)) ensures that the MOSFET can be driven at lower voltages, which is beneficial for battery-operated devices and energy-saving applications.

The STB300NH02L features an R<sub>DS(on) value of just 2.7 mΩ, contributing to its high efficiency and reduced power dissipation. This characteristic is particularly valuable in applications where thermal management is crucial, such as in power supplies, DC-DC converters, motor control circuits, and automotive systems.

This MOSFET is housed in a D2PAK package, which is known for its ability to handle high levels of power and its ease of mounting on printed circuit boards (PCBs). The package is designed to offer excellent thermal performance and durability, ensuring reliability even in demanding environments.

Key Features:

  • N-Channel enhancement mode
  • Low threshold drive
  • High-speed switching
  • Low on-resistance: 2.7 mΩ
  • High drain current: 120A
  • Maximum drain-source voltage (V<sub>DS): 25V
  • 100% avalanche tested
  • D2PAK package for high power density

The STB300NH02L is a testament to STMicroelectronics' commitment to providing power management solutions that combine performance, efficiency, and reliability. Whether for industrial, automotive, or consumer electronics, the STB300NH02L is engineered to meet the stringent requirements of modern electronic systems.

You May Also Be Interested in

Supertex, Inc
P-Channel Enhancement-Mode Vertical DMOS FETs
Lowest to $0.5971
Hitachi, Ltd
Silicon N-Channel MOS FET UHF Power Amplifier
Need more? Email Us
Vishay
N-Channel 200-V (D-S) 175C MOSFET
Lowest to $2.7120
Rohm Semiconductor
Switching (-30V,-4.0A)
Lowest to $6.7475
Infineon Technologies
Increased MOSFET dv/dt ruggedness
Lowest to $8.2310
ON Semiconductor
Ultrahigh-Speed Switching Applications
Lowest to $0.4123
Infineon Technologies
OptiMOSTM Power-MOSFET
Lowest to $0.7540
Toshiba Semiconductor and Storage
Switching Voltage Regulators
Lowest to $5.4227
Rohm Semiconductor
4V Drive Nch MOS FET
Lowest to $0.0439

Top Sellers

FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.3053
FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $4.5143
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $4.1579
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $5.2271
Texas Instruments
DC DC CONVERTER 1-16V / Non-Isolated PoL Module DC DC Converter 1 Output 1 ~ 16V 6A 3V - 36V Input
Lowest to $13.4125
Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6071
Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $2.2891
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.4542
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0357
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess