STMicroelectronics STD140N6F7 Power MOSFET
The STD140N6F7 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is designed to meet a wide range of energy-efficient applications, particularly in power supply and power conversion systems. It is part of STMicroelectronics' STripFET™ VII DeepGATE™ technology, which ensures optimized on-state resistance and superior switching performance.
Key Features
- Low On-Resistance: The STD140N6F7 boasts an exceptionally low on-resistance (RDS(on)), which reduces conduction losses and improves overall efficiency.
- High Current Capability: With a continuous drain current (ID) of 80A, this MOSFET can handle high current loads, making it suitable for demanding applications.
- High Switching Speed: The device's fast switching speed is ideal for high-frequency power switching applications.
- 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability under extreme conditions.
- Low Gate Charge: The low gate charge (Qg) of the STD140N6F7 facilitates efficient switching performance and reduces power dissipation.
Applications
The versatility of the STD140N6F7 makes it suitable for a variety of applications, including:
- High-efficiency DC/DC converters
- Synchronous rectification for switch mode power supplies (SMPS)
- Motor control drivers
- Load switches
- Battery management systems
Technical Specifications
| Parameter |
Value |
| Drain-source Voltage (VDS) |
60V |
| Continuous Drain Current (ID) |
80A |
| Power Dissipation (PD) |
125W |
| On-Resistance Max (RDS(on)) |
6.4mΩ |
| Operating Temperature Range |
-55°C to 175°C |
With its robust performance and high reliability, the STD140N6F7 from STMicroelectronics is an excellent choice for designers seeking a power MOSFET that delivers both efficiency and durability.