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STD140N6F7

Part No STD140N6F7
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A DPAK / N-Channel 60 V 80A (Tc) 134W (Tc) Surface Mount DPAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series STripFET™
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 30 V
Power Dissipation (Max) 134W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number STD140
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 678085-STD140N6F7
Ultra Librarian 3D Model Ultra Librarian STD140N6F7 CAD Model

Description

STMicroelectronics STD140N6F7 Power MOSFET

The STD140N6F7 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is designed to meet a wide range of energy-efficient applications, particularly in power supply and power conversion systems. It is part of STMicroelectronics' STripFET™ VII DeepGATE™ technology, which ensures optimized on-state resistance and superior switching performance.

Key Features

  • Low On-Resistance: The STD140N6F7 boasts an exceptionally low on-resistance (RDS(on)), which reduces conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current (ID) of 80A, this MOSFET can handle high current loads, making it suitable for demanding applications.
  • High Switching Speed: The device's fast switching speed is ideal for high-frequency power switching applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability under extreme conditions.
  • Low Gate Charge: The low gate charge (Qg) of the STD140N6F7 facilitates efficient switching performance and reduces power dissipation.

Applications

The versatility of the STD140N6F7 makes it suitable for a variety of applications, including:

  • High-efficiency DC/DC converters
  • Synchronous rectification for switch mode power supplies (SMPS)
  • Motor control drivers
  • Load switches
  • Battery management systems

Technical Specifications

Parameter Value
Drain-source Voltage (VDS) 60V
Continuous Drain Current (ID) 80A
Power Dissipation (PD) 125W
On-Resistance Max (RDS(on)) 6.4mΩ
Operating Temperature Range -55°C to 175°C

With its robust performance and high reliability, the STD140N6F7 from STMicroelectronics is an excellent choice for designers seeking a power MOSFET that delivers both efficiency and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.7000 $58.5000
11+ $9.6000 $105.6000
17+ $9.3000 $158.1000
23+ $9.0000 $207.0000
29+ $8.7000 $252.3000
39+ $7.8000 $304.2000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,653 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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