The STD180N4F6 is a high-performance, N-channel Power MOSFET produced by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This MOSFET is part of STMicroelectronics' STripFET™ VI DeepGATE™ technology, which is renowned for providing excellent on-state resistance and gate charge performance, making it an ideal choice for a wide range of power applications.
Key Features
- Low On-Resistance: The device features an exceptionally low on-state resistance (R<sub>DS(on)), which translates into high efficiency and minimal conduction losses in applications.
- High Current Capability: With a continuous drain current (I<sub>D) of 120A, the STD180N4F6 is capable of handling high current loads, making it suitable for demanding power applications.
- Enhanced Thermal Performance: The MOSFET's package is designed for optimal thermal performance, ensuring reliability and longevity even under high temperature operating conditions.
- Low Gate Charge: The device's low gate charge (Q<sub>g) allows for fast switching performance, which is crucial for improving efficiency in power conversion systems.
- 100% Avalanche Tested: Each unit is tested for avalanche ruggedness, ensuring the MOSFET can handle tough conditions without failure.
Applications
The STD180N4F6 is versatile and can be used in a variety of applications, including:
- High-efficiency DC/DC converters
- Motor control circuits
- Power management solutions
- Automotive systems
- Switching power supplies
Product Summary
Parameter
Value
Drain-source Voltage (V<sub>DS)
40V
Continuous Drain Current (I<sub>D)
120A
Power Dissipation (P<sub>D)
110W
Operating Temperature Range
-55°C to 175°C
Overall, the STD180N4F6 MOSFET from STMicroelectronics exemplifies cutting-edge technology with its robust design and high-performance characteristics, making it an excellent choice for engineers looking to enhance the efficiency and reliability of their power applications.
