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STF13N80K5

Part No STF13N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 12A TO-220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 870pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 038254-STF13N80K5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STF13N80K5
Introduction Date February 14, 2013
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2032
Ultra Librarian 3D Model Ultra Librarian STF13N80K5 CAD Model

Description

STF13N80K5 - N-channel 800 V, 0.28 Ohm typ., 11 A MDmesh K5 Power MOSFET in a TO-220FP package

The STF13N80K5 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, a global semiconductor leader known for its advanced and integrated technologies. This device is a part of the MDmesh™ K5 series, which is renowned for its high voltage threshold and energy-efficient performance. Designed in a TO-220FP package, the STF13N80K5 is optimized for a wide range of high voltage applications that require efficient power management and reliability.

With a voltage rating of 800V, the STF13N80K5 is well-suited for systems that demand robust performance under high voltage conditions. Its low on-resistance of 0.28 Ohm typ. ensures minimal power loss during operation, making it an excellent choice for enhancing energy savings in electronic circuits. The device is capable of handling continuous current up to 11 A, making it versatile for various power-intensive applications.

The MOSFET features STMicroelectronics' MDmesh™ K5 technology, which incorporates a proprietary vertical structure. This structure enables the device to achieve very low on-state resistance and reduce conduction losses. It also ensures a high dv/dt capability, providing improved ruggedness and reliability in harsh environments. The STF13N80K5 is designed to offer fast switching performance, which is crucial for improving efficiency in power conversion systems such as switched-mode power supplies, lighting applications, and power factor correction circuits.

Another significant advantage of the STF13N80K5 is its 100% avalanche tested design, which guarantees safe operation under extreme conditions. This feature is critical in applications where unexpected voltage spikes can occur, ensuring that the device will not fail catastrophically and will provide a reliable solution for circuit protection.

In summary, the STF13N80K5 from STMicroelectronics is a high-performance Power MOSFET that combines high voltage capability, low on-resistance, fast switching, and ruggedness. Its efficiency and reliability make it an ideal choice for designers seeking to optimize their high voltage power management systems across a broad spectrum of industrial, consumer, and computing applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0775 $51.9375
59+ $1.7047 $100.5773
91+ $1.6514 $150.2774
126+ $1.5981 $201.3606
162+ $1.5449 $250.2738
217+ $1.3850 $300.5450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,700 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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