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STF13NM60N-H

Part No STF13NM60N-H
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO-220FP
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 790pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066341-STF13NM60N-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF13NM60N-H CAD Model

Description

STF13NM60N-H - N-channel 600 V, 0.16 ohm typ., 11 A MDmesh™ II Plus™ Low Qg Power MOSFET

The STF13NM60N-H is a high-performance N-channel power MOSFET from STMicroelectronics, which is a part of their MDmesh™ II Plus™ series. This MOSFET is designed with advanced technology that provides an optimal balance of on-resistance, switching speed, and ruggedness. It is particularly suitable for high-efficiency applications that require a low gate charge and minimal on-state resistance.

With a drain-source voltage of 600 V, the STF13NM60N-H is well-suited for high voltage applications. The device features a typical on-resistance of only 0.16 ohm, which helps in reducing conduction losses and improving overall system efficiency. The MOSFET is capable of handling a continuous drain current of up to 11 A, making it an excellent choice for a wide range of power applications.

The low gate charge (Qg) of this MOSFET makes it an excellent choice for applications that require fast switching, such as power supplies, lighting, converters, and inverters. The low intrinsic capacitance and gate charge minimize the switching losses without compromising the ease of drive and robustness, which is a significant advantage in high-frequency circuits.

The STF13NM60N-H comes in a fully isolated TO-220FP package, which provides good thermal performance and simplifies the mounting process. The package is designed to handle high levels of thermal and mechanical stress, ensuring reliability and longevity in demanding environments.

Key features of the STF13NM60N-H include:

  • Low threshold drive
  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Zener-protected
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability

This MOSFET is ideal for designers who are looking for a component that can provide efficient power management while maintaining high reliability and performance. The STF13NM60N-H by STMicroelectronics is a testament to the company's commitment to providing advanced semiconductor solutions that meet the evolving needs of modern electronic systems.

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