STL26N65DM2 - STMicroelectronics Power MOSFET

The STL26N65DM2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This high-performance MOSFET is a part of ST's MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and thermal performance. The STL26N65DM2 is specifically engineered to address the demanding requirements of high-efficiency power conversion applications.

With a drain-source voltage (V<sub>DS) of 650V, the STL26N65DM2 provides a robust solution for systems that experience high voltage stress. The device can handle a continuous drain current (I<sub>D) of up to 26A at 25°C, making it suitable for high-power applications. The MOSFET also features a low on-resistance (R<sub>DS(on)) of 0.190 Ω, which minimizes conduction losses and improves overall system efficiency.

The STL26N65DM2 incorporates ST's second-generation MDmesh technology, which combines a vertical structure with a strip layout to provide a reduced gate charge (Q<sub>g) and lower output capacitance (C<sub>oss). These characteristics significantly enhance the switching speed and reduce switching losses, which is critical for applications such as switch-mode power supplies, LED lighting, solar inverters, and welding equipment.

The device is encapsulated in a TO-247 long leads package, which offers an optimized trade-off between switching performance and on-state resistance, along with a high level of robustness. The package is designed to handle high heat dissipation, ensuring reliable operation even under harsh conditions.

The STL26N65DM2 also features Zener-protected gate, which provides enhanced ESD immunity and eliminates the need for external protection circuits. This built-in protection ensures a longer lifespan and reduces the risk of damage due to electrical overstresses.

Overall, the STL26N65DM2 from STMicroelectronics is an excellent choice for designers looking to enhance power efficiency and reliability in their high-voltage applications. Its cutting-edge technology and robust package design make it a versatile component that can meet the challenges of modern power electronic systems.