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STP16NK60Z

Part No STP16NK60Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 14A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 2650pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 420 mOhm @ 7A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 212351-STP16NK60Z
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP16NK60Z CAD Model

Description

STP16NK60Z - N-CHANNEL 600V - 0.29 ohm - 16A TO-220/TO-220FP Zener-Protected SuperMESH™ MOSFET

The STP16NK60Z is a high-performance N-Channel MOSFET from STMicroelectronics, renowned for its exceptional efficiency and thermal performance. This power MOSFET is part of the SuperMESH™ family, which is distinguished by its unique combination of features that ensure superior performance in a wide range of applications. The device is housed in a TO-220/TO-220FP package, which provides a balance between compactness and the ability to handle significant power.

With a drain-source voltage of 600V, the STP16NK60Z is designed to handle high voltage applications efficiently. This feature makes it an excellent choice for high-efficiency converters and power supplies. The MOSFET's low on-resistance of 0.29 ohm minimizes conduction losses, thereby enhancing overall system efficiency and reducing heat generation.

The device has a continuous drain current of 16A, making it capable of driving high current loads with ease. Its high current capability is complemented by a robust Zener-protected gate, which provides enhanced protection against overvoltage, ensuring long-term reliability and stability in operation.

One of the key benefits of the STP16NK60Z is its fast switching speed, which is essential for reducing switching losses in high-frequency power conversion systems. This feature, combined with the low gate charge, allows for efficient power management and contributes to the reduction of electromagnetic interference (EMI), a critical factor in modern electronic designs.

Engineers will appreciate the MOSFET's 100% avalanche tested design, which guarantees safe operation under extreme conditions. This characteristic is particularly important in applications that may experience unexpected voltage transients.

In summary, the STP16NK60Z from STMicroelectronics is a robust, high-voltage MOSFET that offers a combination of high efficiency, fast switching, and thermal performance. Its Zener-protected gate and avalanche capability make it a reliable choice for demanding power applications, such as switch-mode power supplies, lighting, motor control, and inverter circuits.

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