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STP180NS04ZC

Part No STP180NS04ZC
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 33V 120A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 33V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4560pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 053917-STP180NS04ZC
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP180NS04ZC CAD Model

Description

STP180NS04ZC - STMicroelectronics

The STP180NS04ZC is a high-performance, N-channel Power MOSFET produced by the renowned semiconductor manufacturer STMicroelectronics. This device is designed to meet the rigorous demands of modern electronic applications, offering a blend of efficiency, reliability, and high power density. It is part of STMicroelectronics' STripFET series, which is recognized for its low on-resistance and low gate charge, making these MOSFETs highly efficient for switching applications.

With a maximum continuous drain current of 180A, the STP180NS04ZC is capable of handling high current loads, making it suitable for a wide range of power applications, including DC-DC converters, motor drives, and high-performance computing. Its low on-state resistance (R<sub>DS(on)) of only 4.3 mΩ minimizes power losses and improves overall efficiency, which is crucial for energy-sensitive designs.

The STP180NS04ZC operates at a maximum voltage of 40V, providing a good margin for typical 12V and 24V systems. It features a 100% avalanche tested design, ensuring robustness and reliability even under harsh conditions. The MOSFET comes in a TO-220 package, which is widely used and easy to mount, with good thermal and electrical characteristics.

This Power MOSFET also incorporates advanced technology that reduces the Miller capacitance effect and offers faster switching performance. This results in reduced switching losses and allows for higher frequency operation, which is advantageous for compact power supply designs. Additionally, the device is designed with a low threshold voltage to facilitate driving the MOSFET directly from microcontrollers and other logic devices.

In summary, the STP180NS04ZC is a robust and efficient solution for power switching applications requiring high current, low losses, and high-speed operation. Its combination of low on-resistance, high current capability, and advanced switching characteristics make it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 183 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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