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STP24NM60N

Part No STP24NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 600V 17A TO220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1400pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212355-STP24NM60N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STP24NM60N
Introduction Date January 05, 2011
ECCN EAR99
Country of Origin Morocco
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian STP24NM60N CAD Model

Description

The STP24NM60N is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in the semiconductor industry. This power MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including switching regulators, switch mode power supplies, motor control, and power management functions.

Key Features

  • Low On-Resistance: The STP24NM60N boasts an extremely low on-resistance (RDS(on)), which enhances its efficiency by minimizing conduction losses.
  • High Voltage Capability: With a drain-source voltage (VDSS) of 600V, this MOSFET can handle high voltage applications with ease, making it suitable for industrial and power applications.
  • High Current Rating: The device is capable of supporting a continuous drain current (ID) of up to 20A, making it robust for high current operations.
  • Fast Switching Speed: The fast switching characteristics of the STP24NM60N reduce switching losses and improve performance in high-frequency circuits.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability under extreme conditions.
  • Low Gate Charge: A low gate charge (Qg) reduces the power required to drive the gate, thus saving energy and improving overall system efficiency.

Applications

The STP24NM60N is versatile and can be used in various applications such as:

  • Power supplies for servers, telecom, and industrial uses
  • DC/AC converters for solar inverters
  • Motor drives and controls
  • LED lighting solutions
  • Uninterruptible power supplies (UPS)

Product Summary

Parameter Value
VDSS 600V
ID 20A
RDS(on) Typ. 0.190Ω
Qg Typ. 47nC

The STP24NM60N represents STMicroelectronics' commitment to providing high-quality and durable components for advanced electronic systems. Its robust design and superior electrical characteristics make it a prime choice for engineers and designers looking to enhance the performance and efficiency of their applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.2570 $50.0560
20+ $5.1339 $102.6780
31+ $4.9735 $154.1785
42+ $4.8131 $202.1502
54+ $4.6526 $251.2404
72+ $4.1713 $300.3336
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 450 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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