The STP24NM60N is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in the semiconductor industry. This power MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including switching regulators, switch mode power supplies, motor control, and power management functions.
Key Features
- Low On-Resistance: The STP24NM60N boasts an extremely low on-resistance (RDS(on)), which enhances its efficiency by minimizing conduction losses.
- High Voltage Capability: With a drain-source voltage (VDSS) of 600V, this MOSFET can handle high voltage applications with ease, making it suitable for industrial and power applications.
- High Current Rating: The device is capable of supporting a continuous drain current (ID) of up to 20A, making it robust for high current operations.
- Fast Switching Speed: The fast switching characteristics of the STP24NM60N reduce switching losses and improve performance in high-frequency circuits.
- 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability under extreme conditions.
- Low Gate Charge: A low gate charge (Qg) reduces the power required to drive the gate, thus saving energy and improving overall system efficiency.
Applications
The STP24NM60N is versatile and can be used in various applications such as:
- Power supplies for servers, telecom, and industrial uses
- DC/AC converters for solar inverters
- Motor drives and controls
- LED lighting solutions
- Uninterruptible power supplies (UPS)
Product Summary
| Parameter |
Value |
| VDSS |
600V |
| ID |
20A |
| RDS(on) |
Typ. 0.190Ω |
| Qg |
Typ. 47nC |
The STP24NM60N represents STMicroelectronics' commitment to providing high-quality and durable components for advanced electronic systems. Its robust design and superior electrical characteristics make it a prime choice for engineers and designers looking to enhance the performance and efficiency of their applications.