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STP9NK70Z

Part No STP9NK70Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 7.5A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 1370pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 092490-STP9NK70Z
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP9NK70Z CAD Model

Description

The STP9NK70Z is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to handle a continuous drain current of up to 8A and is characterized by a drain-source voltage of 700V, which makes it suitable for high-voltage applications.

With an on-resistance of only 1.1Ω, the STP9NK70Z ensures high efficiency in power conversion, minimizing energy losses during operation. This feature, combined with its high-speed switching capabilities, makes it an excellent choice for a wide range of power applications such as switch-mode power supplies (SMPS), lighting applications, high-efficiency converters, and motor control circuits.

The device comes in a robust TO-220 package, which provides a good balance between thermal performance and space-saving on the PCB. The TO-220 package also allows for easy mounting and handling in various electronic assemblies.

Key features of the STP9NK70Z include:

  • Low threshold drive
  • High avalanche ruggedness
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Reduced gate drive requirements

The device also incorporates advanced MDmesh™ technology, which combines the benefits of reduced on-resistance and fast switching with the ruggedness and reliability that are hallmarks of STMicroelectronics' power MOSFETs. This technology ensures that the STP9NK70Z is capable of withstanding high energy pulses in the avalanche and commutation modes, which is critical for reliable operation in demanding applications.

For designers and engineers looking for a power MOSFET with high voltage capability, low on-resistance, and high-switching performance, the STP9NK70Z from STMicroelectronics is an ideal choice that offers reliability and efficiency in a widely-used package format.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7946 $59.5950
180+ $0.6526 $117.4680
275+ $0.6318 $173.7450
380+ $0.6122 $232.6360
490+ $0.5914 $289.7860
655+ $0.5301 $347.2155
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,700 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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