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STU4N80K5

Part No STU4N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3A IPAK  /  N-Channel 800 V 3A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series SuperMESH5™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number STU4N80
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-14578-5,STU4N80K5-ND,497-14578-5
Standard Package 75
Win Source Part Number 1201502-STU4N80K5
Ultra Librarian 3D Model Ultra Librarian STU4N80K5 CAD Model

Description

STU4N80K5 - N-Channel 800V - 3.3 Ohm - 4A SuperMESH™ Power MOSFET

The STU4N80K5 is a high-performance N-Channel Power MOSFET from the renowned semiconductor manufacturer STMicroelectronics. This device is part of their SuperMESH™ family, which is known for its excellent RDS(on) area ratio and reduced gate charge, making it a highly efficient choice for power conversion applications.

This MOSFET is designed to operate at 800V, providing a robust solution for high-voltage scenarios. Its threshold voltage is optimized for a range of 3.0V to 4.0V, ensuring a precise operation. With a continuous drain current of 4A, the STU4N80K5 is capable of handling significant power without overheating, thanks to its maximum junction temperature of 150°C.

The STU4N80K5 boasts an extremely low on-resistance of just 3.3 Ohm, which minimizes conduction losses and improves overall efficiency. This feature, combined with the fast switching speed, makes the STU4N80K5 an ideal choice for high-efficiency power supplies, lighting applications, including LED drivers, and any circuit requiring high voltage switching with minimal power loss.

The device is housed in a TO-251 package, which offers a compact footprint while still providing excellent thermal performance. This package is well-suited for space-constrained applications, and its through-hole mounting design ensures secure and reliable mechanical attachment to the circuit board.

STMicroelectronics has also integrated various protection features into the STU4N80K5 to ensure long-term reliability. These include a 100% avalanche tested design, which guarantees the device's ruggedness against repetitive high-energy pulses. Furthermore, the MOSFET is compliant with the RoHS directive, making it an environmentally friendly choice for modern electronic designs.

In summary, the STU4N80K5 from STMicroelectronics is a powerful and reliable component that offers a combination of high voltage capability, low on-resistance, and fast switching performance. Its advanced features and robust design make it suitable for a wide range of applications where efficiency and reliability are paramount.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5926 $55.7410
80+ $1.3068 $104.5440
120+ $1.2660 $151.9200
165+ $1.2251 $202.1415
215+ $1.1843 $254.6245
285+ $1.0618 $302.6130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,900 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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