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STW10N105K5

Part No STW10N105K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1050V 6A TO247  /  N-Channel 1050 V 6A (Tc) 130W (Tc) Through Hole TO-247-3
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh K5
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1050 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V
Vgs (Max) 30V
Input Capacitance (Ciss) (Max) @ Vds 545 pF @ 100 V
Power Dissipation (Max) 130W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-15283-5,-497-15283-5
Standard Package 30
Win Source Part Number 1228742-STW10N105K5
Ultra Librarian 3D Model Ultra Librarian STW10N105K5 CAD Model

Description

The STW10N105K5 is a state-of-the-art N-channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of the MDmesh™ K5 series, which is renowned for its high efficiency and performance, especially in high-voltage applications. The device is designed to meet the rigorous demands of power electronics engineers, providing a blend of low on-resistance and low gate charge to ensure high efficiency in power conversion systems.

Key Features

  • High Voltage Capability: The STW10N105K5 is capable of handling voltages up to 1050V, making it suitable for a wide range of high-voltage applications.
  • Low On-Resistance (R<sub>DS(on)): This MOSFET offers an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power circuits.
  • Low Gate Charge (Q<sub>g): The device features a low gate charge, which minimizes switching losses and enables faster switching performance.
  • Zener-Protected: The gate of the STW10N105K5 is protected by an integrated Zener diode, which provides enhanced protection against electrostatic discharge (ESD) and extends the longevity of the device.

Applications

The robustness and versatility of the STW10N105K5 make it an ideal choice for a variety of power applications, including:

  • Switching power supplies
  • LED lighting solutions
  • Power adapters and chargers
  • DC-DC converters
  • Solar inverters
  • Welding equipment

Advanced Technology

The MDmesh™ K5 technology integrates a unique vertical structure, which enables the MOSFET to achieve very low on-resistance and gate charge at high voltages. This technology, combined with the device's high threshold voltage, ensures excellent dv/dt capability, providing reliable performance even under harsh conditions.

Package and Reliability

The STW10N105K5 is offered in a TO-247 long leads package, which is designed for optimal thermal performance and ease of mounting in various applications. The quality and reliability of the MOSFET are backed by STMicroelectronics' commitment to high manufacturing standards and rigorous testing protocols.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.6445 $53.1560
19+ $5.4519 $103.5861
29+ $5.2815 $153.1635
40+ $5.1112 $204.4480
51+ $4.9408 $251.9808
68+ $4.4297 $301.2196
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,135 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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