The 1383740-TSM150NB04CR RLG is a MOSFET transistor from Taiwan Semiconductor.

• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40 V
• Continuous Drain Current (Id): 10A @ 25°C (Ta) and 41A @ 25°C (Tc)
• Rds On (Max): 15mOhm @ 10A and 10V gate-source voltage (Vgs)
• Gate Threshold Voltage (Vgs(th)): 4V @ 250µA drain current (Id)
• Power Dissipation: 3.1W @ 25°C (Ta) and 56W @ 25°C (Tc)
• Package: Surface Mount, 8-PowerLDFN
• Supplier Device Package: 8-PDFN (5.2x5.75)
• Gate Charge (Qg): 19nC @ 10V gate-source voltage (Vgs)
• Input Capacitance (Ciss): 1092pF @ 20V drain-source voltage (Vds)
• Operating Temperature: -55°C to 175°C
• REACH: Unaffected
• Moisture Sensitivity Level: 1 (Unlimited)