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Same model may have multiple batches, images only for reference.
TSM850N06CX
Same model may have multiple batches, images only for reference.

TSM850N06CX

Part No TSM850N06CX
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 60V, 3A, SINGLE N-CHANNEL POWER
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta), 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 529 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number TSM850
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380178-TSM850N06CX
Ultra Librarian 3D Model Ultra Librarian TSM850N06CX CAD Model

Description

The TSM850N06CX is an N-channel MOSFET from Taiwan Semiconductor Corporation.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 2.3A
  • Gate-Source Voltage (Vgs): ±20V
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
  • Gate Charge (Qg) @ Vgs: 9.5nC @ 10V
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Operating Temperature: -55°C to 150°C
  • Channel Type: N-Channel

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,150+ $0.0436 $50.1400
2,795+ $0.0358 $100.0610
4,325+ $0.0347 $150.0775
5,955+ $0.0336 $200.0880
7,695+ $0.0325 $250.0875
10,310+ $0.0291 $300.0210
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Availability: 12,070 pieces
MOQ: 1150 pcs
Order Increment : 1 pcs
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