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CSD16322Q5

Part No CSD16322Q5
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 97A 8SON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 21A (Ta), 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 9.7nC @ 4.5V
Max Input Capacitance 1365pF @ 12.5V
Maximum Gate-Source Voltage +10V, -8V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 5 mOhm @ 20A, 8V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SON
Dimension 8-PowerTDFN
Win Source Part Number 116746-CSD16322Q5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CSD16322Q5 CAD Model

Description

Overview

Designed for optimal performance, the CSD16322Q5 is an N-channel MOSFET that excels in high-current applications. Its small footprint allows for efficient use in compact circuits.

Features and Benefits

  • High Current Capability: Supports high load applications efficiently.
  • Enhanced dV/dt Ruggedness: Provides stable performance under various conditions.
  • Efficient Thermal Performance: Maximizes power handling and heat dissipation.

Applications

  • Switching Power Supplies
  • Battery Management Systems
  • Instrumentation Amplifiers

Additional Details

The CSD16322Q5 utilizes advanced MOSFET technology, contributing to lower conduction losses and a significant increase in system efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1587 $52.1415
95+ $1.0854 $103.1130
145+ $1.0487 $152.0615
210+ $0.9754 $204.8340
270+ $0.9387 $253.4490
335+ $0.9021 $302.2035
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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