The Texas Instruments CSD18535KCS is a state-of-the-art N-channel NexFET™ power MOSFET designed to deliver high performance in a compact package. This advanced power semiconductor is ideal for a wide range of applications that require efficient power conversion and management, including computing, networking, and telecommunication systems, as well as industrial power supplies and motor drives.

Key Features

• Low On-Resistance: The CSD18535KCS boasts an ultra-low on-resistance (R<sub>DS(on)) of 3.3 mΩ at V<sub>GS = 10 V, which minimizes conduction losses and improves overall efficiency.
• High Continuous Drain Current: It supports a high continuous drain current (I<sub>D) of 100 A, making it suitable for high-power applications.
• Low Gate Charge: With a low gate charge (Q<sub>g), this MOSFET ensures reduced switching losses, which is critical for high-frequency power switching applications.
• Advanced Packaging: Encased in a TO-220 package, the CSD18535KCS is designed for easy mounting and heat dissipation, ensuring reliable operation even under high thermal conditions.

Applications

The versatility of the CSD18535KCS makes it well-suited for a variety of power management tasks. Here are some of the applications where this MOSFET can be utilized:

• DC to DC converters
• Synchronous buck converters
• Motor control circuits
• Power supplies for servers, telecom, and networking equipment

Reliability and Performance

Texas Instruments is known for its commitment to quality and reliability, and the CSD18535KCS is no exception. It is built to meet rigorous industry standards, ensuring long-term reliability and consistent performance. The device also features a robust body diode that can handle high surge currents and offers protection against reverse current conditions, enhancing system safety and durability.

Technical Specifications

Parameter Value R<sub>DS(on) 3.3 mΩ I<sub>D 100 A V<sub>GS 10 V Q<sub>g Low Package TO-220