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Same model may have multiple batches, images only for reference.
2SA2121-R(Q)
Same model may have multiple batches, images only for reference.

2SA2121-R(Q)

Part No 2SA2121-R(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT PNP 200V 15A 3-Pin(3+Tab) TO-3PL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 200 V
Collector Emitter Voltage (VCEO) 200 V
Element Configuration Single
Emitter Base Voltage (VEBO) 5 V
Gain Bandwidth Product 25 MHz
Lead Free Yes
Max Collector Current 15 A
Maximum Operating Temperature 150 °C
Max Power Dissipation 220 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Polarity PNP
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1036637-2SA2121-R(Q)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA2121-R(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 2SA2121-R(Q) PNP RF transistor is an ideal choice for applications requiring a gain bandwidth product of 25 MHz.

  • Gain Bandwidth Product: 25 MHz
  • Maximum Power Dissipation: 220 W
  • Collector Base Voltage (VCBO): 200 V
  • Collector Emitter Voltage (VCEO): 200 V
  • Configuration: Single element
  • Maximum Collector Current: 15 A
  • Compliance: Lead-free and RoHS compliant
  • Mounting: Through hole
  • Operating Temperature: -55 °C to 150 °C

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