The 2SC3325-Y is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in high-frequency amplifier applications, providing high gain and low noise performance.

Applications:

• High-frequency amplifiers
• Oscillators
• Mixers
• Low-noise amplifiers (LNAs)
• RF circuits

Features:

• High transition frequency (fT = 8 GHz typical)
• Low noise figure (NF = 1.5 dB typical)
• High power gain
• Small outline package
• RoHS compliant

Benefits:

• Improved signal amplification in high-frequency circuits
• Reduced noise interference
• Increased system sensitivity
• Compact design for space-constrained applications
• Environmentally friendly

Specifications:

The 2SC3325-Y has a collector-emitter voltage (VCEO) of 12V and a collector current (IC) of 50mA. The power dissipation (PC) is 200mW. The current gain (hFE) is typically 100 to 300. The operating temperature range is -55°C to +150°C. This transistor is commonly packaged in a SOT-23 (or similar small outline) package. The high transition frequency enables efficient operation in high-frequency applications. The low noise figure makes it suitable for sensitive receiver circuits.