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2SC3710A-Y(F)

Part No 2SC3710A-Y(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 80V 12A 3-Pin(3+Tab) TO-220NIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 80 V
Collector Emitter Voltage (VCEO) 80 V
Lead Free Yes
Max Collector Current 12 A
Maximum Operating Temperature 150 °C
Max Power Dissipation 30 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1037091-2SC3710A-Y(F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC3710A-Y(F) CAD Model

Description

The 2SC3710A-Y(F) is an RF transistor (BJT) with three pins manufactured by Toshiba Semiconductor and Storage.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Type: RF transistor (BJT)
  • Pins: Three
  • Collector Base Voltage (VCBO): 80 V
  • Collector Emitter Voltage (VCEO): 80 V
  • Maximum Collector Current: 12 A
  • Lead-Free: Yes
  • Mounting: Through hole
  • Supply and Demand Status: Shortage
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C

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