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Same model may have multiple batches, images only for reference.
RN2112,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2112,LF(CB

Part No RN2112,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.1W SSM
Datasheet
RN2112,LF(CB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 1092490-RN2112,LF(CB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2112,LF(CB CAD Model

Description

The RN2112,LF(CB) is a PNP pre-biased transistor designed for use in high-frequency applications with a transition frequency of 200MHz.

  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Case/Package: SMD (SMT)
  • Typical Gain (hFE): 120 @ 1mA and 5V
  • Maximum Power Dissipation: 100mW
  • Collector Cut-Off Current: 100nA (ICBO)

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