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Same model may have multiple batches, images only for reference.
SSM3J35CTC,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J35CTC,L3F

Part No SSM3J35CTC,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.25A CST3C
Datasheet
SSM3J35CTC,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Input Capacitance 42pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 150mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CST3C
Dimension SC-101, SOT-883
Win Source Part Number 105766-SSM3J35CTC,L3F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3J35CTC,L3F CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a P-channel, SMD (SMT) mounted component that is used in discrete semiconductor products.

  • Maximum Power Dissipation: 500mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 250mA (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 100μA
  • Maximum Rds On: 1.4 Ohm @ 150mA, 4.5V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
685+ $0.0843 $57.7455
1,670+ $0.0693 $115.7310
2,590+ $0.0670 $173.5300
3,575+ $0.0647 $231.3025
4,550+ $0.0635 $288.9250
6,125+ $0.0566 $346.6750
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Availability: 10,000 pieces
MOQ: 685 pcs
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