SSM3J56MFV,L3F

Part No SSM3J56MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.8A VESM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Max Input Capacitance 100pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 390 mOhm @ 800mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VESM
Dimension SOT-723
Win Source Part Number 098533-SSM3J56MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient

Description

The Toshiba SSM3J56MFV,L3F is a P-channel MOSFET that is used in various electronic devices. It is a medium popularity product with sufficient supply and demand status. The SSM3J56MFV,L3F is a reliable and efficient component that is used in various applications. It has a maximum power dissipation of 150mW (Ta) and a drain-source breakdown voltage of 20V. The continuous drain current at 25°C is 800mA (Ta). The maximum Rds On at Id,Vgs is 390 mOhm @ 800mA, 4.5V. The Toshiba SSM3J56MFV,L3F is a high-performance component that is widely used in the electronics industry.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
1,230+ $0.0408 $50.1840
2,620+ $0.0382 $100.0840
4,070+ $0.0369 $150.1830
5,835+ $0.0343 $200.1405
7,580+ $0.0330 $250.1400
9,495+ $0.0316 $300.0420
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 576,900 pieces
MOQ: 1230 pcs
Order Increment : 1 pcs
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