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SSM3J56MFV,L3F Toshiba Semiconductor and Storage SSM3J56MFV,L3F real image6494
Same model may have multiple batches, images only for reference.
SSM3J56MFV,L3F Toshiba Semiconductor and Storage SSM3J56MFV,L3F real image6494
SSM3J56MFV,L3F Toshiba Semiconductor and Storage SSM3J56MFV,L3F real image6494
Same model may have multiple batches, images only for reference.

SSM3J56MFV,L3F

Part No SSM3J56MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.8A VESM
Datasheet
SSM3J56MFV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Max Input Capacitance 100pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 390 mOhm @ 800mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VESM
Dimension SOT-723
Win Source Part Number 098533-SSM3J56MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J56MFV,L3F CAD Model

Description

The Toshiba SSM3J56MFV,L3F is a P-channel MOSFET that is used in various electronic devices.

  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Maximum Power Dissipation: 150mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 800mA (Ta) @ 25°C
  • Maximum Rds On: 390 mOhm @ 800mA, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,230+ $0.0407 $50.0610
2,995+ $0.0334 $100.0330
4,645+ $0.0323 $150.0335
6,390+ $0.0313 $200.0070
8,280+ $0.0302 $250.0560
11,075+ $0.0271 $300.1325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 576,900 pieces
MOQ: 1230 pcs
Order Increment : 1 pcs
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