The SSM3K16FU is an N-channel MOSFET from Toshiba Semiconductor and Storage. It is designed for high-speed switching applications. It offers low on-resistance and excellent switching characteristics.

Applications

• Load switches
• DC-DC converters
• High-speed switching circuits
• Power management circuits
• Portable devices

Features

• Low on-resistance (RDS(ON)): Reduces power loss and improves efficiency.
• Low gate charge (Qg): Enables fast switching speeds.
• Small package size: Facilitates compact circuit designs.
• Logic level drive: Allows direct control from microcontrollers and other digital circuits.
• Lead-free: Compliant with environmental regulations.

Benefits

• Improved efficiency: Low on-resistance minimizes power dissipation.
• Enhanced performance: Fast switching speed allows for efficient operation in power management circuits.
• Smaller footprint: Compact package size enables miniaturization of electronic devices.
• Easy to use: Logic level drive simplifies interfacing with digital control circuits.
• Environmentally friendly: Lead-free construction complies with RoHS standards.

Technical Specifications

• Drain-Source Voltage (VDS): 20V
• Gate-Source Voltage (VGS): 12V
• Drain Current (ID): 3A
• On-Resistance (RDS(ON)): 0.075 Ohms at VGS = 4.5V
• Operating Temperature: -55°C to +150°C.
• Package: SOT-23

The SSM3K16FU is a reliable and efficient N-channel MOSFET suitable for a wide range of power management applications requiring high-speed switching.