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Same model may have multiple batches, images only for reference.
SSM3K44MFV,L3F Real Image
Same model may have multiple batches, images only for reference.

SSM3K44MFV,L3F

Part No SSM3K44MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100MA VESM
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Max) @ Id, Vgs 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8.5 pF @ 3 V
Power Dissipation (Max) 150mW (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package VESM
Package / Case SOT-723
Base Product Number SSM3K44
Standard Package 8,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 341397-SSM3K44MFV,L3F
Ultra Librarian 3D Model Ultra Librarian SSM3K44MFV,L3F CAD Model

Description

The 341397-SSM3K44MFV,L3F is a N-Channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Drain to source voltage (Vdss): 30V
  • Continuous drain current (Id): 100mA @ 25°C
  • Maximum on-resistance (Rds On): 4Ohm @ 10mA, 4V
  • Gate threshold voltage (Vgs(th)): 1.5V @ 100μA
  • Power dissipation: 150mW
  • Operating temperature range: -40°C to 150°C
  • Mounting: surface mount device
  • Package: SOT-723
  • Suitable for: various applications including power management, motor control, and switching circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
275+ $0.1851 $50.9025
660+ $0.1519 $100.2540
1,020+ $0.1472 $150.1440
1,405+ $0.1424 $200.0720
1,820+ $0.1377 $250.6140
2,435+ $0.1234 $300.4790
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Availability: 1,940 pieces
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