The Toshiba Semiconductor and Storage 043094-TK100A10N1 is a N-channel MOSFET with a maximum power dissipation of 45W @ Tc.

• Voltage & Current: It has a drain-source breakdown voltage of 100V and a continuous drain current of 100A @ 25°C.
• Gate Threshold: The gate-source threshold voltage is 4V @ 1mA, with a maximum gate charge of 140nC @ 10V and a maximum input capacitance of 8800pF @ 50V.
• RDS(on): The maximum Rds On @ Id,Vgs is 3.8 mOhm @ 50A, 10V.
• Package: The device is packaged in a TO-220SIS case and is mounted through hole.
• Application: It is designed for use in discrete semiconductor products and has a limited supply and demand status.