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TK11A45D

Part No TK11A45D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 450V 11A TO-220SIS
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 450V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1050pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 620 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 366903-TK11A45D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK11A45D CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has a medium popularity.

  • Win Source Part Number: The Win Source Part Number is 366903-TK11A45D.
  • Type: It is a N-Channel MOSFET with a power dissipation of 40W (Tc).
  • Case: It has a TO-220SIS case and dimension of TO-220-3 Full Pack.
  • Supply and Demand: The supply and demand status is balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.0115 $60.0460
10+ $12.3169 $123.1690
15+ $11.9323 $178.9845
21+ $11.5477 $242.5017
26+ $11.1619 $290.2094
35+ $10.0081 $350.2835
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,480 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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