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TK12P60W,RVQ(S

Part No TK12P60W,RVQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11.5A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 340mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TK12P60
Standard Package 2,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 750067-TK12P60W,RVQ(S
Ultra Librarian 3D Model Ultra Librarian TK12P60W,RVQ(S CAD Model

Description

The TK12P60W is a single N-channel MOSFET transistor designed for high power applications.

  • Product Name: TK12P60W
  • Manufacturer: Toshiba Semiconductor and Storage
  • Series: DTMOSIV
  • Package: Tape and reel
  • Standard Package: 2,000 pieces
  • Base Product Number: TK12P60
  • Status: Active
  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 11.5A @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2640 $58.7520
44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,300 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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